发明授权
US09209171B2 Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device
有权
半导体装置及其制造方法以及非易失性半导体存储装置
- 专利标题： Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device
- 专利标题（中）： 半导体装置及其制造方法以及非易失性半导体存储装置
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申请号： US13812181申请日： 2011-06-20
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公开(公告)号： US09209171B2公开(公告)日： 2015-12-08
- 发明人: Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
- 申请人： Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge PC
- 优先权： JP2010-174172 20100803
- 国际申请： PCT/JP2011/064060 WO 20110620
- 国际公布： WO2012/017746 WO 20120209
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/8249 ; H01L21/84 ; H01L27/07 ; H01L27/092 ; H01L27/11 ; H01L27/115 ; H01L27/12 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; G11C16/04 ; H01L27/102 ; G11C11/412
摘要：
Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.