Invention Grant
- Patent Title: Stacked thin channels for boost and leakage improvement
- Patent Title (中): 堆叠薄通道，用于提升和泄漏改善
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Application No.: US14222070Application Date: 2014-03-21
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Publication No.: US09209199B2Publication Date: 2015-12-08
- Inventor: Fatma Arzum Simsek-Ege , Jie Jason Sun , Benben Li , Srikant Jayanti , Han Zhao , Guangyu Huang , Haitao Liu
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alpine Technology Law Group LLC
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/792 ; H01L29/66 ; H01L29/16 ; H01L29/04 ; H01L29/10 ; H01L21/02
Abstract:
A hollow-channel memory device comprises a source layer, a first hollow-channel pillar structure formed on the source layer, and a second hollow-channel pillar structure formed on the first hollow-channel pillar structure. The first hollow-channel pillar structure comprises a first thin channel and the second hollow-channel pillar structure comprises a second thin channel that is in contact with the first thin channel. In one exemplary embodiment, the first thin channel comprises a first level of doping; and the second thin channel comprises a second level of doping that is different from the first level of doping. In another exemplary embodiment, the first and second levels of doping are the same.
Public/Granted literature
- US20150270280A1 STACKED THIN CHANNELS FOR BOOST AND LEAKAGE IMPROVEMENT Public/Granted day:2015-09-24
Information query
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