Invention Grant
- Patent Title: Memory cells and methods of forming memory cells
- Patent Title (中): 记忆细胞和形成记忆细胞的方法
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Application No.: US14070423Application Date: 2013-11-01
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Publication No.: US09209388B2Publication Date: 2015-12-08
- Inventor: Christopher W. Petz , Dale W. Collins , Scott E. Sills , Shuichiro Yasuda
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells.
Public/Granted literature
- US20150123065A1 Memory Cells and Methods of Forming Memory Cells Public/Granted day:2015-05-07
Information query
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