Invention Grant
- Patent Title: Nonvolatile memory device and method of operating the same
- Patent Title (中): 非易失存储器件及其操作方法
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Application No.: US14175342Application Date: 2014-02-07
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Publication No.: US09213598B2Publication Date: 2015-12-15
- Inventor: Youngil Seo , Jungho Yun , Wonchul Lee , Dawoon Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0017627 20130219
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10

Abstract:
A nonvolatile memory device includes a nonvolatile memory, a buffer memory configured to store a plurality of read data transmitted from the nonvolatile memory, an error detection and correction circuit configured to detect an error in partial data of each of the plurality of read data and judging whether the partial data is correctable or not on the basis of the detected error, and a controller configured to analyze the uncorrectable partial data with respect to the plurality of read data to determine a representative value, and to transmit the representative value to the error detection and correction circuit. The plurality of read data is read through a read operation with respect to a same page.
Public/Granted literature
- US20140237319A1 NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2014-08-21
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