Invention Grant
US09214229B2 Phase change memory material and system for embedded memory applications
有权
相变存储器材料和嵌入式存储器应用系统
- Patent Title: Phase change memory material and system for embedded memory applications
- Patent Title (中): 相变存储器材料和嵌入式存储器应用系统
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Application No.: US14309776Application Date: 2014-06-19
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Publication No.: US09214229B2Publication Date: 2015-12-15
- Inventor: Huai-Yu Cheng , Hsiang-Lan Lung , Che-Min Lin
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Yiding Wu
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L45/00
Abstract:
A family of phase change materials GewSbxTeyNz having a crystallization temperature greater than 410° C., wherein a Ge atomic concentration is within a range from 43% to 54%, a Sb atomic concentration is within a range from 6% to 13%, a Te atomic concentration is within a range from 14% to 23%, and a N atomic concentration is within a range of 15% to 27%, is described. A method for programming a memory device including such phase change materials is also described.
Public/Granted literature
- US20140376309A1 PHASE CHANGE MEMORY MATERIAL AND SYSTEM FOR EMBEDDED MEMORY APPLICATIONS Public/Granted day:2014-12-25
Information query
