公开(公告)号：US09214229B2

公开(公告)日：2015-12-15

申请号：US14309776

申请日：2014-06-19

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  Hsiang-Lan Lung ,  Che-Min Lin

IPC: G11C13/00 ,  H01L45/00

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C2013/0083 ,  G11C2213/79 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625

Abstract: A family of phase change materials GewSbxTeyNz having a crystallization temperature greater than 410° C., wherein a Ge atomic concentration is within a range from 43% to 54%, a Sb atomic concentration is within a range from 6% to 13%, a Te atomic concentration is within a range from 14% to 23%, and a N atomic concentration is within a range of 15% to 27%, is described. A method for programming a memory device including such phase change materials is also described.

Abstract translation: 一种具有大于410℃的结晶温度的相变材料GewSbxTeyNz，其中Ge原子浓度在43％至54％的范围内，Sb原子浓度在6％至13％的范围内，a Te原子浓度在14％至23％的范围内，并且N原子浓度在15％至27％的范围内。 还描述了一种用于编程包括这种相变材料的存储器件的方法。