Invention Grant
US09214377B2 Methods for silicon recess structures in a substrate by utilizing a doping layer
有权
通过利用掺杂层在衬底中的硅凹陷结构的方法
- Patent Title: Methods for silicon recess structures in a substrate by utilizing a doping layer
- Patent Title (中): 通过利用掺杂层在衬底中的硅凹陷结构的方法
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Application No.: US14068312Application Date: 2013-10-31
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Publication No.: US09214377B2Publication Date: 2015-12-15
- Inventor: Ying Zhang , Hua Chung , Srinivas D. Nemani , Ludovic Godet
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/762 ; H01L21/265
Abstract:
Embodiments of the present invention provide a methods for forming silicon recess structures in a substrate with good process control, particularly suitable for manufacturing three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of forming recess structures in a substrate includes etching a first portion of a substrate defined by a second portion formed in the substrate until a doping layer formed in the substrate is exposed.
Public/Granted literature
- US20150118822A1 METHODS FOR SILICON RECESS STRUCTURES IN A SUBSTRATE BY UTILIZING A DOPING LAYER Public/Granted day:2015-04-30
Information query
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