Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14304945Application Date: 2014-06-15
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Publication No.: US09214412B2Publication Date: 2015-12-15
- Inventor: Katsuhiko Funatsu , Yukihiro Sato , Yuichi Yato , Tomoaki Uno
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2013-138155 20130701
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/10 ; H01L23/00 ; H01L23/31 ; H01L21/56
Abstract:
A semiconductor device includes a first chip mounting portion, a first semiconductor chip arranged over the first chip mounting portion, a first pad formed in a surface of the first semiconductor chip, a first lead which serves as an external coupling terminal, a first conductive member which electrically couples the first pad and the first lead, and a sealing body which seals a part of the first chip mounting portion, the first semiconductor chip, a part of the first lead, and the first conductive member. The first conductive member includes a first plate-like portion, and a first support portion formed integrally with the first plate-like portion. An end of the first support portion is exposed from the sealing body, and the first support portion is formed with a first bent portion.
Public/Granted literature
- US20150001699A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-01-01
Information query
IPC分类:
