发明授权
- 专利标题： Power semiconductor device and preparation method thereof
- 专利标题（中）： 功率半导体器件及其制备方法
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申请号： US14194502申请日： 2014-02-28
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公开(公告)号： US09214419B2公开(公告)日： 2015-12-15
- 发明人: Yan Xun Xue , Hamza Yilmaz , Yueh-Se Ho , Jun Lu
- 申请人： Yan Xun Xue , Hamza Yilmaz , Yueh-Se Ho , Jun Lu
- 申请人地址： US CA Sunnyvale
- 专利权人： ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- 当前专利权人： ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- 当前专利权人地址： US CA Sunnyvale
- 代理商 Chein-Hwa S. Tsao; Chen-Chi Lin
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L23/495 ; H01L21/78 ; H01L23/29 ; H01L23/48 ; H01L23/52
摘要：
A preparation method for a power semiconductor device includes: providing a lead frame containing a plurality of chip mounting units, one side edge of a die paddle of each chip mounting unit is bent and extended upwardly and one lead connects to the bent side edge of the die paddle and extends in an opposite direction from the die paddle; attaching a semiconductor chip to the top surface of the die paddle; forming metal bumps on each electrode at the front of the semiconductor chip with a top end of each metal bump protruding out of a plane of the top surface of the lead; heating the metal bump and pressing a top end of each metal bump by a pressing plate forming a flat top end surface that is flush with the top surface of the lead; and cutting the lead frame to separate individual chip mounting units.
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