Invention Grant
US09214423B2 Method of forming a HEMT semiconductor device and structure therefor
有权
形成HEMT半导体器件的方法及其结构
- Patent Title: Method of forming a HEMT semiconductor device and structure therefor
- Patent Title (中): 形成HEMT半导体器件的方法及其结构
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Application No.: US14174500Application Date: 2014-02-06
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Publication No.: US09214423B2Publication Date: 2015-12-15
- Inventor: Ali Salih , Chun-Li Liu , Gordon M. Grivna
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ Phoeniz
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoeniz
- Agent Robert F. Hightower
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L23/498 ; H01L29/66 ; H01L29/778 ; H01L21/768 ; H01L21/78 ; H01L23/482 ; H01L29/20 ; H01L21/683 ; H01L23/00
Abstract:
In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
Public/Granted literature
- US20140264452A1 METHOD OF FORMING A HEMT SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR Public/Granted day:2014-09-18
Information query
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