Invention Grant
US09214539B2 Gallium nitride transistor with a hybrid aluminum oxide layer as a gate dielectric
有权
具有混合氧化铝层的氮化镓晶体管作为栅极电介质
- Patent Title: Gallium nitride transistor with a hybrid aluminum oxide layer as a gate dielectric
- Patent Title (中): 具有混合氧化铝层的氮化镓晶体管作为栅极电介质
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Application No.: US14016328Application Date: 2013-09-03
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Publication No.: US09214539B2Publication Date: 2015-12-15
- Inventor: Han-Chin Chiu , King-Yuen Wong , Cheng-Yuan Tsai , Chia-Shiung Tsai , Xiaomeng Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/778 ; H01L29/66 ; H01L29/20 ; H01L29/04
Abstract:
Some embodiments of the present disclosure relates to a hybrid gate dielectric layer that has good interface and bulk dielectric properties. Surface traps can degrade device performance and cause large threshold voltage shifts in III-N HEMTs. This disclosure uses a hybrid ALD (atomic layer deposited)-oxide layer which is a combination of H2O-based and O3/O2-based oxide layers that provide both good interface and good bulk dielectric properties to the III-N device. The H2O-based oxide layer provides good interface with the III-N surface, whereas the O3/O2-based oxide layer provides good bulk properties.
Public/Granted literature
- US20150060861A1 GaN Misfets with Hybrid AI203 As Gate Dielectric Public/Granted day:2015-03-05
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