Invention Grant
US09214585B2 Annealing for damage free laser processing for high efficiency solar cells
有权
用于高效太阳能电池的无损伤激光加工退火
- Patent Title: Annealing for damage free laser processing for high efficiency solar cells
- Patent Title (中): 用于高效太阳能电池的无损伤激光加工退火
-
Application No.: US14265331Application Date: 2014-04-29
-
Publication No.: US09214585B2Publication Date: 2015-12-15
- Inventor: Virendra V. Rana , Mehrdad M. Moslehi , Pawan Kapur , Benjamin Rattle , Heather Deshazer , Solene Coutant
- Applicant: Solexel, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Solexel, Inc.
- Current Assignee: Solexel, Inc.
- Current Assignee Address: US CA Milpitas
- Agent John Wood
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0445 ; H01L31/049 ; H01L33/00 ; H01L31/0216 ; H01L31/0224 ; H01L31/0236 ; H01L31/0352 ; H01L31/068 ; H01L31/056
Abstract:
Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.
Public/Granted literature
- US20150056742A1 ANNEALING FOR DAMAGE FREE LASER PROCESSING FOR HIGH EFFICIENCY SOLAR CELLS Public/Granted day:2015-02-26
Information query
IPC分类:
