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    SINGLE PASSIVATED CONTACTS FOR BACK CONTACT BACK JUNCTION SOLAR CELLS
    3.
    发明申请
    SINGLE PASSIVATED CONTACTS FOR BACK CONTACT BACK JUNCTION SOLAR CELLS 审中-公开
    单接触式接触器返回接头太阳能电池

    公开(公告)号：US20150236174A1

    公开(公告)日：2015-08-20

    申请号：US14576161

    申请日：2014-12-18

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Heather Deshazer ,  Mohammed Islam ,  Mehrdad M. Moslehi

    IPC: H01L31/0224 ,  H01L31/0216

    CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0682 ,  Y02E10/547

    Abstract: Passivated contact structures and fabrication methods for back contact back junction solar cells are provided. According to one example embodiment, a back contact back junction photovoltaic solar cell is described that has a semiconductor light absorbing layer having a front side and a backside having base regions and emitter regions. A passivating dielectric insulating layer is positioned on the base regions. A first level base and emitter metallization contacts the emitter regions and passivating dielectric insulating layer on the base regions. An electrically insulating backplane is positioned on the first level base and emitter metallization. A second level metallization contacts the first level base and emitter metallization through conductive vias in the electrically insulating backplane.

    Abstract translation: 提供了背接触太阳能电池的钝化接触结构和制造方法。 根据一个示例性实施例，描述了具有正面和背面具有基极区域和发射极区域的半导体光吸收层的背面接合光伏太阳能电池。 钝化介电绝缘层位于基极区上。 第一级基极和发射极金属化接触发射极区域并钝化基极区域上的介电绝缘层。 电绝缘背板位于第一级基底和发射极金属化上。 第二级金属化通过电绝缘背板中的导电通孔接触第一级基极和发射极金属化。

    DIELECTRIC-PASSIVATED METAL INSULATOR PHOTOVOLTAIC SOLAR CELLS
    5.
    发明申请
    DIELECTRIC-PASSIVATED METAL INSULATOR PHOTOVOLTAIC SOLAR CELLS 审中-公开
    电介质绝缘金属绝缘子光伏太阳能电池

    公开(公告)号：US20150129030A1

    公开(公告)日：2015-05-14

    申请号：US14538760

    申请日：2014-11-11

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Heather Deshazer ,  Mohammed Islam ,  Mehrdad M. Moslehi

    IPC: H01L31/0224 ,  H01L31/18

    CPC classification number: H01L31/022425 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/0328 ,  H01L31/062 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/50

    Abstract: A photovoltaic solar cell is described that, according to one example embodiment, includes a semiconductor light absorbing layer and a dielectric stack on at least one of a front side of the light absorbing layer or a back side of the light absorbing layer. The dielectric stack includes a tunneling dielectric layer being sufficiently thin for charge carriers to tunnel across, and an overlaying dielectric layer being a different material than the overlaying dielectric. The solar cell also includes an electrically conductive contact physically contacting the overlaying dielectric. The electrically conductive contact and the overlaying dielectric together have either a work function suitable for selective collection of electrons that closely matches a conduction band of the light absorbing layer, or a work function suitable for selective collection of holes that closely matches a valence band of the light absorbing layer.

    Abstract translation: 描述了根据一个示例实施例的光伏太阳能电池，在光吸收层的前侧或光吸收层的背面中的至少一个上包括半导体光吸收层和电介质叠层。 电介质堆叠包括隧穿介质层，其电荷载流子足够薄以隧道穿过，覆盖介质层是与覆盖电介质不同的材料。 太阳能电池还包括物理接触覆盖电介质的导电接触。 导电触点和覆盖电介质一起具有适合于选择性收集与光吸收层的导带紧密匹配的电子的功函数，或适合于选择性收集与 光吸收层。

    Trench isolation for monolithically isled solar photovoltaic cells and modules
    9.
    发明授权
    Trench isolation for monolithically isled solar photovoltaic cells and modules 有权
    单片太阳能光伏电池和模块的沟槽隔离

    公开(公告)号：US09130076B2

    公开(公告)日：2015-09-08

    申请号：US14601202

    申请日：2015-01-20

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Heather Deshazer ,  Pawan Kapur

    IPC: H01L21/00 ,  H01L27/04 ,  H01L31/0224 ,  H01L31/18

    CPC classification number: H01L31/022458 ,  H01L27/1421 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the trench stop layer. A trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions the semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.

    Abstract translation: 提供制造方法和结构用于形成单片背面接触背面太阳能电池。 在一个实施例中，在背接触太阳能电池基板的背面形成基极和发射极接触金属化。 在背面接合太阳能电池基板的背面形成沟槽阻挡层，并且与基底和发射极接触金属化电气隔离。 沟槽停止层具有用于形成多个半导体区域的图案。 在基极和发射极接触金属化和沟槽停止层上形成电绝缘层。 通过背面接合太阳能电池基板形成沟槽隔离层，其将半导体层分隔成电绝缘层上的多个太阳能电池半导体区域。

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