Invention Grant
- Patent Title: Dynamic memory cell replacement using column redundancy
- Patent Title (中): 使用列冗余的动态内存单元更换
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Application No.: US13972082Application Date: 2013-08-21
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Publication No.: US09218262B2Publication Date: 2015-12-22
- Inventor: Fu-An Wu , Jung-Ping Yang , Chia-En Huang , Cheng Hung Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/25

Abstract:
A memory chip comprises a main memory array having a plurality of memory columns, a redundancy memory column associated with the main memory array, and a hit logic circuitry configured to generate a plurality of hit logic signals by a plurality of hit logic units in the hit logic circuitry to enable dynamic replacement of a defective memory cell in one of the memory columns for dynamic replacement by the redundancy memory column when the memory array is in operation.
Public/Granted literature
- US20150058664A1 DYNAMIC MEMORY CELL REPLACEMENT USING COLUMN REDUNDANCY Public/Granted day:2015-02-26
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