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US09218262B2 Dynamic memory cell replacement using column redundancy 有权
使用列冗余的动态内存单元更换

Dynamic memory cell replacement using column redundancy
Abstract:
A memory chip comprises a main memory array having a plurality of memory columns, a redundancy memory column associated with the main memory array, and a hit logic circuitry configured to generate a plurality of hit logic signals by a plurality of hit logic units in the hit logic circuitry to enable dynamic replacement of a defective memory cell in one of the memory columns for dynamic replacement by the redundancy memory column when the memory array is in operation.
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