Fabricating method of a semiconductor device

Invention Grant

US09218977B2 Fabricating method of a semiconductor device 有权

Title translation: 半导体器件的制造方法

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Patent Title: Fabricating method of a semiconductor device
Patent Title (中): 半导体器件的制造方法
Application No.: US14015414

Application Date: 2013-08-30
Publication No.: US09218977B2

Publication Date: 2015-12-22
Inventor: Seok-Jun Won , Weon-Hong Kim , Moon-Kyun Song , Hyung-Suk Jung
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Applicant Address: KR Suwon-si, Gyeonggi-do
Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee Address: KR Suwon-si, Gyeonggi-do
Agency: Lee & Morse, P.C.
Priority: KR10-2012-0117831 20121023
Main IPC: H01L21/3205
IPC: H01L21/3205 ; H01L21/4763 ; H01L21/28 ; H01L29/51 ; H01L21/8234 ; H01L21/8238 ; H01L29/49 ; H01L29/66 ; H01L27/11

Abstract:

A fabricating method of a semiconductor device includes stacking a high-k dielectric film not containing silicon (Si) and an insulating film containing silicon (Si) on a substrate, and diffusing Si contained in the insulating film into the high-k dielectric film by annealing the substrate having the high-k dielectric film and the insulating film stacked thereon.

Abstract(Chinese):

半导体器件的制造方法包括在基板上堆叠不含硅（Si）的高k电介质膜和含硅（Si）的绝缘膜，并且将包含在绝缘膜中的Si扩散到高k电介质膜中，由退火具有高k电介质膜的基板和堆叠在其上的绝缘膜。

Public/Granted literature

US20140113443A1 FABRICATING METHOD OF A SEMICONDUCTOR DEVICE Public/Granted day:2014-04-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）