发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13294945申请日： 2011-11-11
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公开(公告)号： US09219012B2公开(公告)日： 2015-12-22
- 发明人: Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
- 申请人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
- 申请人地址： TW Hsinchu
- 专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人地址： TW Hsinchu
- 优先权： TW97110053A 20080321
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/8234 ; H01L21/8238
摘要：
A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.
公开/授权文献
- US20120056295A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 公开/授权日：2012-03-08
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