Invention Grant
- Patent Title: Phosphor layer-covered optical semiconductor element, producing method thereof, optical semiconductor device, and producing method thereof
- Patent Title (中): 含荧光体层的光半导体元件及其制造方法，光半导体装置及其制造方法
-
Application No.: US14068585Application Date: 2013-10-31
-
Publication No.: US09219015B2Publication Date: 2015-12-22
- Inventor: Takashi Kondo , Hiroyuki Katayama
- Applicant: NITTO DENKO CORPORATION
- Applicant Address: JP Osaka
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Osaka
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-247598 20121109
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L21/66
Abstract:
A method for producing a phosphor layer-covered optical semiconductor element includes a step of opposing a phosphor layer containing a phosphor to an optical semiconductor element and an adjusting step of adjusting a color tone of light emitted from the optical semiconductor element and exited via the phosphor layer by adjusting the thickness of the phosphor layer.
Public/Granted literature
Information query
IPC分类:
