公开(公告)号：US09219015B2

公开(公告)日：2015-12-22

申请号：US14068585

申请日：2013-10-31

Applicant: NITTO DENKO CORPORATION

Inventor： Takashi Kondo ,  Hiroyuki Katayama

IPC: H01L33/50 ,  H01L21/66

CPC classification number: H01L22/24 ,  H01L33/50 ,  H01L33/507 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: A method for producing a phosphor layer-covered optical semiconductor element includes a step of opposing a phosphor layer containing a phosphor to an optical semiconductor element and an adjusting step of adjusting a color tone of light emitted from the optical semiconductor element and exited via the phosphor layer by adjusting the thickness of the phosphor layer.

Abstract translation: 荧光体层覆盖的光学半导体元件的制造方法包括将含有荧光体的荧光体层与光半导体元件相对的步骤，以及调整从光半导体元件发出的光的色调并经由荧光体排出的调整步骤 通过调整荧光体层的厚度来实现。

公开(公告)号：US09082940B2

公开(公告)日：2015-07-14

申请号：US13914158

申请日：2013-06-10

Applicant: NITTO DENKO CORPORATION

Inventor： Yuki Ebe ,  Hiroyuki Katayama ,  Ryuichi Kimura ,  Hidenori Onishi ,  Kazuhiro Fuke

IPC: H01L33/50 ,  H01L33/56 ,  H01L33/52 ,  H01L21/56 ,  H01L23/28 ,  H01L33/00

CPC classification number: H01L33/501 ,  H01L21/568 ,  H01L23/28 ,  H01L33/0095 ,  H01L33/52 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

Abstract: A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board; disposing a semiconductor element at one side in a thickness direction of the support sheet; disposing an encapsulating layer formed from an encapsulating resin composition containing a curable resin at the one side in the thickness direction of the support sheet so as to cover the semiconductor element; curing the encapsulating layer to encapsulate the semiconductor element by the encapsulating layer that is flexible; cutting the encapsulating layer that is flexible corresponding to the semiconductor element to produce an encapsulating layer-covered semiconductor element; and peeling the encapsulating layer-covered semiconductor element from the support sheet.

Abstract translation: 一种封装层覆盖的半导体元件的制造方法，其特征在于，包括硬支撑基板的支撑片的制作工序。 在支撑片的厚度方向的一侧设置半导体元件; 在所述支撑片的厚度方向的一侧设置由包含固化性树脂的封装树脂组合物形成的封装层，以覆盖所述半导体元件; 固化该封装层以通过柔性的封装层封装该半导体元件; 切割对应于半导体元件的柔性的封装层以产生封装层覆盖的半导体元件; 以及将所述封装层覆盖的半导体元件从所述支撑片剥离。

公开(公告)号：US08907502B2

公开(公告)日：2014-12-09

申请号：US13914231

申请日：2013-06-10

Applicant: Nitto Denko Corporation

Inventor： Yuki Ebe ,  Hiroyuki Katayama ,  Ryuichi Kimura ,  Hidenori Onishi ,  Kazuhiro Fuke

IPC: H01L33/52 ,  H01L23/28 ,  H01L21/56 ,  H01L33/00

CPC classification number: H01L33/505 ,  H01L21/56 ,  H01L23/28 ,  H01L33/0095 ,  H01L33/52 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

Abstract: A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board formed with a through hole passing through in a thickness direction and a pressure-sensitive adhesive layer laminated on a surface at one side in the thickness direction of the support board so as to cover the through hole; disposing a semiconductor element on a surface at one side in the thickness direction of the pressure-sensitive adhesive layer in opposed to the through hole in the thickness direction; covering the semiconductor element with an encapsulating layer to produce an encapsulating layer-covered semiconductor element; and inserting a pressing member into the through hole from the other side in the thickness direction to peel the encapsulating layer-covered semiconductor element from the pressure-sensitive adhesive layer.

Abstract translation: 一种封装层覆盖的半导体元件的制造方法，其特征在于，具有：制作支承片的工序，所述支承片包括形成有贯通厚度方向的贯通孔的硬质支持基板和层叠在一侧的表面上的压敏粘合剂层 支撑板的厚度方向以覆盖通孔; 在所述压敏粘合剂层的厚度方向的与所述贯通孔的厚度方向相对的一侧的表面上配置半导体元件; 用封装层覆盖半导体元件以产生封装层覆盖的半导体元件; 并且从厚度方向的另一侧将加压构件插入到所述通孔中，以将所述封装层覆盖的半导体元件从所述压敏粘合剂层剥离。

公开(公告)号：US20180280559A1

公开(公告)日：2018-10-04

申请号：US15765588

申请日：2016-10-06

Applicant: NITTO DENKO CORPORATION

Inventor： Ekambaram Sambandan ,  Sazzadur Rahman Khan ,  Takuya Fukumura ,  Hiroyuki Katayama

IPC: A61L9/20 ,  B01J23/30 ,  B01J23/10 ,  B01J23/652 ,  B01J23/888 ,  B01J23/745 ,  B01J35/00 ,  A61L9/18

Abstract: A photocatalytic element including: a photocatalytic layer containing at least one photocatalytic material; and a light emitting source in optical communication with the photocatalytic material, the light emitting source disposed sufficiently proximal to the photocatalytic material to raise the surface temperature of at least some of the photocatalytic material to a temperature between 10° C. and 90° C. is provided.

公开(公告)号：US20170146504A1

公开(公告)日：2017-05-25

申请号：US15360790

申请日：2016-11-23

Applicant: NITTO DENKO CORPORATION

Inventor： Ekambaram Sambandan ,  Jie Cai ,  Hiroyuki Katayama

IPC: G01N33/00 ,  G01N27/12

CPC classification number: G01N33/0047 ,  A61B5/082 ,  G01N27/125

Abstract: Described herein are devices for detecting the concentration of acetone gas. Some gas sensor devices comprise: a gas sensor element that includes a boron-doped the polycrystalline n-type semiconductor epsilon WO3. In addition, multi-detector gas sensor elements are also described including at least one based on the aforementioned gas sensor element where the other elements differ in material properties. In addition, methods for detecting acetone gas based on the disclosed elements are also described.

公开(公告)号：US09172010B2

公开(公告)日：2015-10-27

申请号：US13778515

申请日：2013-02-27

Applicant: NITTO DENKO CORPORATION

Inventor： Shinsuke Wakiya ,  Toshikazu Takagi ,  Hirofumi Fukutsuka ,  Yasunari Ooyabu ,  Hiroyuki Katayama ,  Takashi Kondo ,  Hiroki Kono

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/60

CPC classification number: H01L33/508 ,  H01L25/0753 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A light-emitting device includes a substrate including a mirror surface region on its upper surface, a semiconductor light-emitting element disposed in the mirror surface region, and an encapsulating layer joined onto the upper surface of the substrate. The encapsulating layer includes a lower layer that is in contact with the upper surface of the substrate, covers the surrounding of the semiconductor light-emitting element, and contains phosphor; and an upper layer that is positioned on the lower layer, and has a larger phosphor content per unit area than that of the lower layer.

Abstract translation: 发光装置包括其上表面上具有镜面区域的基板，配置在镜面区域的半导体发光元件和与基板的上表面接合的封装层。 封装层包括与基板的上表面接触的下层，覆盖半导体发光元件的周围，并含有荧光体; 以及位于下层上的上层，并且每单位面积的荧光体含量比下层高。

公开(公告)号：US09024353B2

公开(公告)日：2015-05-05

申请号：US14042856

申请日：2013-10-01

Applicant: Nitto Denko Corporation

Inventor： Hiroyuki Katayama ,  Takashi Kondo ,  Yuki Ebe ,  Munehisa Mitani

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/54 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683

CPC classification number: H01L33/502 ,  B32B3/08 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B27/283 ,  B32B2307/306 ,  B32B2307/54 ,  B32B2457/00 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/06 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/54 ,  H01L2221/68331 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/10157 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/005 ,  H01L2924/00

Abstract: An encapsulating sheet-covered semiconductor element includes a semiconductor element having one surface in contact with a board and the other surface disposed at the other side of the one surface and an encapsulating sheet covering at least the other surface of the semiconductor element. The encapsulating sheet includes an exposed surface that is, when projected from one side toward the other side, not included in the one surface of the semiconductor element and exposed from the one surface and the exposed surface has the other side portion that is positioned toward the other side with respect to the one surface of the semiconductor element.

Abstract translation: 封装片覆盖的半导体元件包括具有与基板接触的一个表面的半导体元件和设置在该一个表面的另一侧的另一个表面以及至少覆盖半导体元件的另一个表面的封装片。 封装片包括暴露表面，当从一侧朝向另一侧突出时，该暴露表面不包括在半导体元件的一个表面中并且从该一个表面露出并且暴露表面具有朝向该侧表面的另一侧部 相对于半导体元件的一个表面的另一侧。

公开(公告)号：US20130345370A1

公开(公告)日：2013-12-26

申请号：US13912443

申请日：2013-06-07

Applicant: NITTO DENKO CORPORATION

Inventor： Haruka ONA ,  Hiroyuki Katayama

IPC: C07F7/08 ,  C08L83/04

CPC classification number: C07F7/087 ,  C08G77/16 ,  C08G77/20 ,  C08K5/5425 ,  C08K2201/014 ,  C08L83/04 ,  G02B1/04

Abstract: A first silicone resin composition is prepared by allowing an organopolysiloxane containing silanol groups at both ends containing silanol groups at both ends of a molecule and a silicon compound containing, in one molecule, at least two leaving groups leaving by a condensation reaction with the silanol groups to undergo the condensation reaction in the presence of a condensation catalyst. The silicon compound contains a trifunctional silicon compound containing, in one molecule, the three leaving groups and a bifunctional silicon compound containing, in one molecule, the two leaving groups.

Abstract translation: 通过使分子的两端含有硅烷醇基的硅烷醇基的含有有机聚硅氧烷和在一分子中含有至少两个离去基团的硅化合物，通过与硅烷醇基团进行缩合反应离开而制备第一有机硅树脂组合物 在缩合催化剂存在下进行缩合反应。 硅化合物含有在一个分子中含有三个离去基团的三官能硅化合物和在一个分子中含有两个离去基团的双官能硅化合物。

公开(公告)号：US10379095B2

公开(公告)日：2019-08-13

申请号：US15360790

申请日：2016-11-23

Applicant: NITTO DENKO CORPORATION

Inventor： Ekambaram Sambandan ,  Jie Cai ,  Hiroyuki Katayama

IPC: G01N27/00 ,  G01N33/00 ,  A61B5/08 ,  G01N27/12

Abstract: Described herein are devices for detecting the concentration of acetone gas. Some gas sensor devices comprise: a gas sensor element that includes a boron-doped the polycrystalline n-type semiconductor epsilon WO3. In addition, multi-detector gas sensor elements are also described including at least one based on the aforementioned gas sensor element where the other elements differ in material properties. In addition, methods for detecting acetone gas based on the disclosed elements are also described.

公开(公告)号：US20180186954A1

公开(公告)日：2018-07-05

申请号：US15542635

申请日：2016-01-14

Applicant: NITTO DENKO CORPORATION

Inventor： Shijun Zheng ,  Hiroyuki Katayama ,  Sergey Simavoryan

IPC: C08J7/04 ,  C08F16/06 ,  C08J3/24 ,  C08J7/12 ,  C09D129/04

CPC classification number: C08J7/047 ,  C08F16/06 ,  C08F2500/26 ,  C08F2810/20 ,  C08J3/24 ,  C08J7/123 ,  C08J2367/02 ,  C08J2401/00 ,  C08J2403/00 ,  C08J2405/08 ,  C08J2429/04 ,  C08J2489/00 ,  C08J2489/06 ,  C08K3/042 ,  C08K5/07 ,  C08K5/5415 ,  C08K2201/008 ,  C08K2201/011 ,  C09D129/04 ,  C08K13/02

Abstract: Described herein is a transparent graphene and polymer based nanocomposite barrier film that provides gas, fluid, and/or vapor resistance. Also described is a barrier film where the graphene may be selected from reduced graphene oxide, graphene oxide, and is also functionalized or crosslinked. Also described is a barrier film where there is crosslinking between the graphene and/or the polymers to provide enhanced water resistance. A barrier device is also described that incorporates the barrier film and further comprises a substrate and a protective coating, encompassing the barrier film. Also described are methods for making the aforementioned barrier films and related devices.