发明授权
- 专利标题： Multi-threshold voltage devices and associated techniques and configurations
- 专利标题（中）： 多阈值电压器件及相关技术和配置
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申请号： US14108265申请日： 2013-12-16
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公开(公告)号： US09219155B2公开(公告)日： 2015-12-22
- 发明人: Joseph M. Steigerwald , Tahir Ghani , Jenny Hu , Ian R. C. Post
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Schwabe, Williamson & Wyatt, P.C.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L21/28
摘要：
Embodiments of the present disclosure describe multi-threshold voltage devices and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, a channel body disposed on the semiconductor substrate, a first gate electrode having a first thickness coupled with the channel body and a second gate electrode having a second thickness coupled with the channel body, wherein the first thickness is greater than the second thickness. Other embodiments may be described and/or claimed.
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