Invention Grant
- Patent Title: Multi-threshold voltage devices and associated techniques and configurations
- Patent Title (中): 多阈值电压器件及相关技术和配置
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Application No.: US14108265Application Date: 2013-12-16
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Publication No.: US09219155B2Publication Date: 2015-12-22
- Inventor: Joseph M. Steigerwald , Tahir Ghani , Jenny Hu , Ian R. C. Post
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L21/28

Abstract:
Embodiments of the present disclosure describe multi-threshold voltage devices and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, a channel body disposed on the semiconductor substrate, a first gate electrode having a first thickness coupled with the channel body and a second gate electrode having a second thickness coupled with the channel body, wherein the first thickness is greater than the second thickness. Other embodiments may be described and/or claimed.
Public/Granted literature
- US20150171218A1 MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS Public/Granted day:2015-06-18
Information query
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