Invention Grant
- Patent Title: Photomask and method of forming the same
- Patent Title (中): 光掩模及其形成方法
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Application No.: US14059533Application Date: 2013-10-22
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Publication No.: US09223199B2Publication Date: 2015-12-29
- Inventor: Jong Keun Oh , Hyungho Ko , Inkyun Shin , Jaehyuck Choi , JunYoul Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0117361 20121022
- Main IPC: G03F1/50
- IPC: G03F1/50 ; G03F1/48 ; G03F1/68 ; G03F1/80 ; G03F1/54
Abstract:
A photomask and a method of forming the same, the photomask including a transparent substrate; a light shielding pattern on the transparent substrate, the light shielding pattern including molybdenum and silicon; and an etch stop layer covering at least a sidewall of the light shielding pattern, wherein the etch stop layer has an etch rate lower than an etch rate of the light shielding pattern with respect to an ammonia-based cleaning solution.
Public/Granted literature
- US20140113221A1 PHOTOMASK AND METHOD OF FORMING THE SAME Public/Granted day:2014-04-24
Information query
