-
公开(公告)号：US09766540B2
公开(公告)日：2017-09-19
申请号：US14977767
申请日：2015-12-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong Keun Oh , Hyungho Ko , Inkyun Shin , Jaehyuck Choi , JunYoul Choi
Abstract: A photomask and a method of forming the same, the photomask including a transparent substrate; a light shielding pattern on the transparent substrate, the light shielding pattern including molybdenum and silicon; and an etch stop layer covering at least a sidewall of the light shielding pattern, wherein the etch stop layer has an etch rate lower than an etch rate of the light shielding pattern with respect to an ammonia-based cleaning solution.
-
公开(公告)号：US09709893B2
公开(公告)日：2017-07-18
申请号：US14990818
申请日：2016-01-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sook Hyun Lee , Shuichi Tamamushi , So-Eun Shin , Inkyun Shin , Jin Choi
Abstract: An exposure method includes designing a target pattern to be formed on a substrate, producing a first dose map having first dose values of beams of energy, e.g., electron beams, creating from the first dose map a second dose map having second dose values different from the first dose values, and irradiating regions of a layer of photoresist on the substrate with overlapping beams to expose the regions to doses of energy having values based on the second dose values. The photoresist layer may then be developed and used an etch mask. The etch mask may be used to etch a mask layer on a transparent substrate to form a reticle.
-
Patent Agency Ranking
3.发明申请Methods of Reducing Registration Errors of Photomasks and Photomasks Formed Using the Methods 有权使用方法减少光掩模和光掩模的注册错误的方法公开(公告)号：US20150050584A1
公开(公告)日：2015-02-19
申请号：US14319281
申请日：2014-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Choi , Sukjong Bae , Inkyun Shin , Jeonghyeon Lee
Abstract: Methods of reducing registration errors of photomasks and photomasks formed using the methods are provided. The method may include forming a plurality of photomask patterns on a substrate and determining registration errors of the plurality of photomask patterns. The method may further include forming a plurality of stress-producing portions in the substrate to reduce the registration errors by considering exposure latitude variations.
Abstract translation: 提供了减少使用这些方法形成的光掩模和光掩模的配准误差的方法。 该方法可以包括在衬底上形成多个光掩模图案并确定多个光掩模图案的配准误差。 该方法还可以包括在衬底中形成多个应力产生部分，以通过考虑曝光宽容度变化来减小配准误差。
-
公开(公告)号：US10007185B2
公开(公告)日：2018-06-26
申请号：US15361679
申请日：2016-11-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sook Hyun Lee , Jin Choi , Sinjeung Park , Seombeom Kim , Inkyun Shin
IPC: G03F7/20
CPC classification number: G03F7/2059
Abstract: Disclosed is an electron beam lithography method. The method comprises obtaining a target pattern having a first width to be formed on a substrate, acquiring a dose pattern including a fixed dose cell which corresponds to a region of the dose pattern with a constant dose amount of electron beam to be provided onto the substrate and a variable dose cell which corresponds to a region of the dose pattern with a variable dose amount which is varied based on the first width of the target pattern, and providing the electron beam to expose the substrate according to the dose pattern.
-
5.发明授权Methods of reducing registration errors of photomasks and photomasks formed using the methods 有权减少使用该方法形成的光掩模和光掩模的配准误差的方法公开(公告)号：US09323142B2
公开(公告)日：2016-04-26
申请号：US14319281
申请日：2014-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Choi , Sukjong Bae , Inkyun Shin , Jeonghyeon Lee
Abstract: Methods of reducing registration errors of photomasks and photomasks formed using the methods are provided. The method may include forming a plurality of photomask patterns on a substrate and determining registration errors of the plurality of photomask patterns. The method may further include forming a plurality of stress-producing portions in the substrate to reduce the registration errors by considering exposure latitude variations.
Abstract translation: 提供了减少使用这些方法形成的光掩模和光掩模的配准误差的方法。 该方法可以包括在衬底上形成多个光掩模图案并确定多个光掩模图案的配准误差。 该方法还可以包括在衬底中形成多个应力产生部分，以通过考虑曝光宽容度变化来减小配准误差。
-
公开(公告)号：US10056229B2
公开(公告)日：2018-08-21
申请号：US15442754
申请日：2017-02-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sukjong Bae , Myoungsoo Lee , Inkyun Shin
IPC: H01J37/20 , H01J37/317 , B29C67/00 , G03F7/20 , G03F7/00
CPC classification number: H01J37/3174 , B29C64/00 , G03F1/78 , G03F7/0035 , G03F7/70991 , G03F2007/2067 , H01J2237/004 , H01J2237/0245 , H01J2237/31755 , H01J2237/31788
Abstract: A charged-particle beam exposure method includes providing a sample that has patterns having shot densities different from each other, using the sample to obtain pattern drift values correlated with the shot densities, and irradiating the sample with a charged-particle beam to perform an exposure process on the sample. The irradiating of the sample with the charged-particle beam is carried out while a deflection voltage, which is applied to the charged-particle beam to deflect the charged-particle beam, is corrected based on the pattern drift value corresponding to a shot density of a pattern to be formed on the sample.
-
公开(公告)号：US09223199B2
公开(公告)日：2015-12-29
申请号：US14059533
申请日：2013-10-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jong Keun Oh , Hyungho Ko , Inkyun Shin , Jaehyuck Choi , JunYoul Choi
Abstract: A photomask and a method of forming the same, the photomask including a transparent substrate; a light shielding pattern on the transparent substrate, the light shielding pattern including molybdenum and silicon; and an etch stop layer covering at least a sidewall of the light shielding pattern, wherein the etch stop layer has an etch rate lower than an etch rate of the light shielding pattern with respect to an ammonia-based cleaning solution.
Abstract translation: 光掩模及其形成方法，所述光掩模包括透明基板; 透明基板上的遮光图案，包括钼和硅的遮光图案; 以及覆盖所述遮光图案的至少一侧壁的蚀刻停止层，其中所述蚀刻停止层的蚀刻速率低于所述遮光图案相对于氨基清洗溶液的蚀刻速率。
-
-
-
-
-
-
Search Results
7
records
(took 0.028 seconds)
