Invention Grant
US09224462B2 Resistive memory device having defined or variable erase unit size
有权
具有限定或可变擦除单元尺寸的电阻式存储器件
- Patent Title: Resistive memory device having defined or variable erase unit size
- Patent Title (中): 具有限定或可变擦除单元尺寸的电阻式存储器件
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Application No.: US13733384Application Date: 2013-01-03
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Publication No.: US09224462B2Publication Date: 2015-12-29
- Inventor: DongHun Kwak , Cheon-An Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0021673 20120302
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/34 ; G11C13/00
Abstract:
A resistive memory device that simultaneously erases memory cells connected to selected word line(s) included in an erase unit. The erase unit includes fewer word lines than are included in a memory block of the resistive memory device. However, erase verification may nonetheless be performed on a block basis.
Public/Granted literature
- US20130229855A1 RESISTIVE MEMORY DEVICE HAVING DEFINED OR VARIABLE ERASE UNIT SIZE Public/Granted day:2013-09-05
Information query
