Abstract:
A nonvolatile memory device includes multi-level cells. A sensing method of the nonvolatile memory device includes: precharging a bit line and a sense-out node during a first precharge interval; identifying a first state of a selected memory cell, by developing the sense-out node during a first develop time and sensing a first voltage level of the sense-out node; precharging the sense-out node to a second sense-out precharge voltage; and identifying the first state of the selected memory cell from a second state adjacent thereto, by developing the sense-out node during a second develop time different from the first develop time and sensing a second voltage level of the sense-out node.
Abstract:
A resistive memory device that simultaneously erases memory cells connected to selected word line(s) included in an erase unit. The erase unit includes fewer word lines than are included in a memory block of the resistive memory device. However, erase verification may nonetheless be performed on a block basis.
Abstract:
Disclosed is a resistive memory device that simultaneously erases memory cells connected to selected word line(s) included in an erase unit. The erase unit includes fewer word lines than are included in a memory block of the resistive memory device. However, erase verification may nonetheless be performed on a block basis.