Invention Grant
- Patent Title: Method of formation of tin oxide semiconductor thin film doped with antimony
- Patent Title (中): 形成掺杂锑的氧化锡半导体薄膜的方法
-
Application No.: US14097685Application Date: 2013-12-05
-
Publication No.: US09224598B2Publication Date: 2015-12-29
- Inventor: Chaun-Gi Choi , Yeon-Gon Mo , Hyun-Jae Kim , Hyun-Soo Lim , Si-Joon Kim , Tae-Soo Jung , You-Seung Rim
- Applicant: Samsung Display Co., Ltd. , Industry-Academic Cooperation Foundation, Yonsei University
- Applicant Address: KR KR
- Assignee: SAMSUNG DISPLAY CO., LTD.,INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Current Assignee: SAMSUNG DISPLAY CO., LTD.,INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Current Assignee Address: KR KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2013-0079897 20130708
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02
Abstract:
Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.
Public/Granted literature
- US20150011044A1 COMPOSITION FOR TIN OXIDE SEMICONDUCTOR AND METHOD OF FORMATION OF TIN OXIDE SEMICONDUCTOR THIN FILM Public/Granted day:2015-01-08
Information query
IPC分类:
