发明授权
- 专利标题： Bio-implantable hermetic integrated ultra high density device
- 专利标题（中）： 生物植入式气密集成超高密度装置
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申请号： US13490189申请日： 2012-06-06
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公开(公告)号： US09224664B2公开(公告)日： 2015-12-29
- 发明人: Brian R. Smith , Tirunelveli S. Sriram , Bryan L. McLaughlin
- 申请人： Brian R. Smith , Tirunelveli S. Sriram , Bryan L. McLaughlin
- 申请人地址： US MA Cambridge
- 专利权人： The Charles Stark Draper Laboratory, Inc.
- 当前专利权人： The Charles Stark Draper Laboratory, Inc.
- 当前专利权人地址： US MA Cambridge
- 代理机构： Foley & Lardner LLP
- 代理商 Edward A. Gordon
- 主分类号： H05K7/00
- IPC分类号： H05K7/00 ; H01L23/13 ; H01L23/31 ; H01L21/56 ; H01L23/00 ; A61N1/372 ; A61N1/375 ; A61N1/362
摘要：
An implantable bio-compatible integrated circuit device and methods for manufacture thereof are disclosed herein. The device includes a substrate having a recess. An input/output device including at least one bio-compatible electrical contact is coupled to the substrate in the recess. A layer of hermetic bio-compatible, hermetic insulator material is deposited on a portion of the input/output device. An encapsulating layer of bio-compatible material encapsulates at least a portion of the implantable device, including the input/output device. At least one bio-compatible electrical contact of the input/output device is then exposed. The encapsulating layer and the layer of bio-compatible, hermetic insulator material form a hermetic seal around the at least one exposed bio-compatible electrical contact.
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