Invention Grant
- Patent Title: Resistance variable memory device with nanoparticle electrode and method of fabrication
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Application No.: US14524435Application Date: 2014-10-27
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Publication No.: US09224948B2Publication Date: 2015-12-29
- Inventor: Jun Liu , Kristy A. Campbell
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.
Public/Granted literature
- US20150041754A1 RESISTANCE VARIABLE MEMORY DEVICE WITH NANOPARTICLE ELECTRODE AND METHOD OF FABRICATION Public/Granted day:2015-02-12
Information query
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