Diode/Superionic Conductor/Polymer Memory Structure
    2.
    发明申请
    Diode/Superionic Conductor/Polymer Memory Structure 有权
    二极管/超导体/聚合物存储器结构

    公开(公告)号:US20160087007A1

    公开(公告)日:2016-03-24

    申请号:US14965660

    申请日:2015-12-10

    Abstract: A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide layer is provided over and in contact with the first metal-chalcogenide layer. The first metal-chalcogenide layer has a first conductivity type and the second metal-chalcogenide layer has a second conductivity type. The plane of contact between the first and second metal-chalcogenide layers creates the p-n junction of the built-in diode. Then a polymer layer is selectively deposited on the second metal-chalcogenide layer. The second metal-chalcogenide layer provides ions to the polymer layer to change its resistivity. A top electrode is then provided over the polymer layer. An exemplary memory cell may have the following stacked structure: first electrode/n-type semiconductor/p-type semiconductor/conjugated polymer/second electrode.

    Abstract translation: 通过在底部电极上提供第一金属 - 硫族化物层来形成具有内置二极管的共轭聚合物层。 随后,第二金属 - 硫族化物层设置在第一金属 - 硫属化物层上并与其接触。 第一金属 - 硫族化物层具有第一导电类型,第二金属 - 硫族化物层具有第二导电类型。 第一和第二金属 - 硫族化物层之间的接触平面形成内置二极管的p-n结。 然后将聚合物层选择性地沉积在第二金属 - 硫族化物层上。 第二金属 - 硫族化物层向聚合物层提供离子以改变其电阻率。 然后在聚合物层上提供顶部电极。 示例性存储单元可以具有以下堆叠结构:第一电极/ n型半导体/ p型半导体/共轭聚合物/第二电极。

    Phase change current density control structure
    4.
    发明授权
    Phase change current density control structure 有权
    相变电流密度控制结构

    公开(公告)号:US09147838B2

    公开(公告)日:2015-09-29

    申请号:US14481411

    申请日:2014-09-09

    Abstract: A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.

    Abstract translation: 一种相变存储元件及其形成方法。 存储元件包括第一和第二电极。 第一层相变材料位于第一和第二电极之间。 包括金属 - 硫族化物材料的第二层也在第一和第二电极之间,并且是相变材料和导电材料之一。 绝缘层位于第一和第二层之间。 绝缘层中至少有一个开口提供第一和第二层之间的接触。

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