Invention Grant
- Patent Title: High-hardness polycrystalline diamond and method of preparing the same
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Application No.: US11988891Application Date: 2006-07-21
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Publication No.: US09227166B2Publication Date: 2016-01-05
- Inventor: Hitoshi Sumiya
- Applicant: Hitoshi Sumiya
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-211140 20050721; JP2005-239815 20050822; JP2005-290967 20051004
- International Application: PCT/JP2006/314470 WO 20060721
- International Announcement: WO2007/011019 WO 20070125
- Main IPC: B01J3/06
- IPC: B01J3/06 ; B82Y30/00 ; C04B35/52 ; C04B35/626 ; C04B35/645

Abstract:
There are provided sufficiently strong, hard, and heat resistant, dense and homogenous polycrystalline diamond applicable to cutting tools, dressers, dies and other working tools and excavation bits and the like, and a cutting tool having a cutting edge of the polycrystalline diamond. The polycrystalline diamond is formed substantially only of diamond formed using a composition of material containing a non diamond type carbon material, the composition of material being converted directly into diamond and sintered at ultra high pressure and ultra high temperature without aid of a sintering aid or a catalyst, and has a mixed microstructure having a fine crystal grain of diamond having a maximal grain size of at most 100 nm and an average grain size of at most 50 nm and a coarse crystal grain of diamond in the form of one of a platelet and a granule having a grain size of at least 50 nm and at most 10,000 nm.
Public/Granted literature
- US20090305039A1 High-hardness polycrystalline diamond and method of preparing the same Public/Granted day:2009-12-10
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