发明授权
US09230826B2 Etching method using mixed gas and method for manufacturing semiconductor device
有权
使用混合气体的蚀刻方法和制造半导体器件的方法
- 专利标题： Etching method using mixed gas and method for manufacturing semiconductor device
- 专利标题（中）： 使用混合气体的蚀刻方法和制造半导体器件的方法
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申请号： US13213130申请日： 2011-08-19
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公开(公告)号： US09230826B2公开(公告)日： 2016-01-05
- 发明人: Shinya Sasagawa , Hiroshi Fujiki , Shinobu Furukawa , Hidekazu Miyairi
- 申请人： Shinya Sasagawa , Hiroshi Fujiki , Shinobu Furukawa , Hidekazu Miyairi
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权： JP2010-189928 20100826; JP2010-190075 20100826
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/3213 ; H01L29/66 ; H01L29/786
摘要：
A method for etching is provided in which the etching selectivity of an amorphous semiconductor film to a crystalline semiconductor film is high. Part of a stacked semiconductor film in which an amorphous semiconductor film is provided on a crystalline semiconductor film is etched using a mixed gas of a Br-based gas, a F-based gas, and an oxygen gas, so that part of the crystalline semiconductor film provided in the stacked semiconductor film is exposed. Reduction in the film thickness of the exposed portion can be suppressed by performing the etching in such a manner. Moreover, when etching for forming a back channel portion of a thin film transistor is performed with the method for etching, favorable electric characteristics of the thin film transistor can be obtained. An insulating layer is preferably provided over the thin film transistor.
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