Invention Grant
US09230866B2 Fabricating method of customized mask and fabricating method of semiconductor device using customized mask
有权
定制掩模的制造方法和使用定制掩模的半导体器件的制造方法
- Patent Title: Fabricating method of customized mask and fabricating method of semiconductor device using customized mask
- Patent Title (中): 定制掩模的制造方法和使用定制掩模的半导体器件的制造方法
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Application No.: US14140775Application Date: 2013-12-26
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Publication No.: US09230866B2Publication Date: 2016-01-05
- Inventor: Jae-Han Lee , Hoo-Sung Cho , Cheol-Hong Kim , Seung-Hak Park
- Applicant: Jae-Han Lee , Hoo-Sung Cho , Cheol-Hong Kim , Seung-Hak Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0004046 20130114
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/66 ; H01L21/311 ; G03F1/70 ; H01L27/115 ; G03F1/84

Abstract:
A fabricating method of a customized mask includes forming first patterns in a mold structure, forming second patterns in the mold structure using initial masks, the mold structure having the first patterns formed therein, measuring overlap failure between the first patterns and the second patterns, and fabricating customized masks by compensating for pattern positions of the initial masks based on the measuring results, wherein compensating for the pattern positions of the initial masks includes shifting positions of at least some patterns of the initial masks according to shift directions and sizes of at least some of the first patterns.
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Information query
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