Invention Grant
- Patent Title: Complementary read-only memory (ROM) cell and method for manufacturing the same
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Application No.: US14014224Application Date: 2013-08-29
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Publication No.: US09236140B2Publication Date: 2016-01-12
- Inventor: Jitendra Dasani
- Applicant: STMicroelectronics International N.V.
- Applicant Address: NL Amsterdam
- Assignee: STMICROELECTRONICS INTERNATIONAL N.V.
- Current Assignee: STMICROELECTRONICS INTERNATIONAL N.V.
- Current Assignee Address: NL Amsterdam
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: IN3125/DEL/2010 20101228
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/08 ; H01L27/112 ; G11C7/06 ; G11C17/12
Abstract:
A complementary read-only memory (ROM) cell includes a transistor; and a bit line and a complementary bit line adjacent to the transistor; wherein a drain terminal of the transistor is connected to one of the bit line and the complementary bit line based on data programmed in the ROM cell.
Public/Granted literature
- US20140003121A1 COMPLEMENTARY READ-ONLY MEMORY (ROM) CELL AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-01-02
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