Invention Grant
- Patent Title: Method for making semiconductor devices including reactant treatment of residual surface portion
- Patent Title (中): 包括反应物处理残留表面部分的半导体器件的方法
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Application No.: US14151188Application Date: 2014-01-09
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Publication No.: US09236243B2Publication Date: 2016-01-12
- Inventor: ChongJieh Chew
- Applicant: STMICROELECTRONICS PTE LTD
- Applicant Address: SG Singapore
- Assignee: STMICROELECTRONICS PTE LTD
- Current Assignee: STMICROELECTRONICS PTE LTD
- Current Assignee Address: SG Singapore
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/033
Abstract:
A method for making semiconductor devices may include forming a phosphosilicate glass (PSG) layer on a semiconductor wafer, with the PSG layer having a phosphine residual surface portion. The method may further include exposing the phosphine residual surface portion to a reactant plasma to integrate at least some of the phosphine residual surface portion into the PSG layer. The method may additionally include forming a mask layer on the PSG layer after the exposing.
Public/Granted literature
- US20150194303A1 METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING REACTANT TREATMENT OF RESIDUAL SURFACE PORTION Public/Granted day:2015-07-09
Information query
IPC分类:
