公开(公告)号：US09236243B2

公开(公告)日：2016-01-12

申请号：US14151188

申请日：2014-01-09

Applicant: STMICROELECTRONICS PTE LTD

Inventor： ChongJieh Chew

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/033

CPC classification number: H01L21/02252 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/02334 ,  H01L21/0234 ,  H01L21/033 ,  H01L21/31144

Abstract: A method for making semiconductor devices may include forming a phosphosilicate glass (PSG) layer on a semiconductor wafer, with the PSG layer having a phosphine residual surface portion. The method may further include exposing the phosphine residual surface portion to a reactant plasma to integrate at least some of the phosphine residual surface portion into the PSG layer. The method may additionally include forming a mask layer on the PSG layer after the exposing.

Abstract translation: 制造半导体器件的方法可以包括在半导体晶片上形成磷硅玻璃（PSG）层，其中PSG层具有磷化氢残留表面部分。 该方法可以进一步包括将磷化氢残余表面部分暴露于反应物等离子体以将至少一些磷化氢残余表面部分整合到PSG层中。 该方法还可以包括在曝光之后在PSG层上形成掩模层。