Invention Grant
- Patent Title: Substrate having thin film and method of thin film formation
- Patent Title (中): 具有薄膜的基板和薄膜形成方法
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Application No.: US14267090Application Date: 2014-05-01
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Publication No.: US09236254B2Publication Date: 2016-01-12
- Inventor: Kenichirou Nishida , Tomohiko Oda , Yui Saitou
- Applicant: JOLED INC.
- Applicant Address: JP Tokyo
- Assignee: JOLED INC.
- Current Assignee: JOLED INC.
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Main IPC: H01L21/36
- IPC: H01L21/36 ; H01L21/02 ; H01L21/268 ; H01L29/04 ; H01L29/66 ; H01L29/786 ; H01L27/12
Abstract:
A method of thin film formation includes: preparing a substrate; forming a thin film above the substrate; and crystallizing the thin film by irradiating the thin film with a light beam, in which the crystallizing includes steps of: crystallizing the thin film in a first region into a first crystalline thin film by irradiating the first region while scanning a first light beam relative to the substrate, the first region including at least one of: edge portions of the substrate; and a region through which a cutting line passes when the substrate is cut; and subsequently crystallizing the thin film in a second region into a second crystalline thin film by irradiating at least the second region while scanning a second light beam relative to the substrate, and the thin film has a higher absorption ratio of the second light beam than that of the first crystalline thin film.
Public/Granted literature
- US20140231812A1 SUBSTRATE HAVING THIN FILM AND METHOD OF THIN FILM FORMATION Public/Granted day:2014-08-21
Information query
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