公开(公告)号：US09236254B2

公开(公告)日：2016-01-12

申请号：US14267090

申请日：2014-05-01

Applicant: JOLED INC.

Inventor： Kenichirou Nishida ,  Tomohiko Oda ,  Yui Saitou

IPC: H01L21/36 ,  H01L21/02 ,  H01L21/268 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/02675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/786

Abstract: A method of thin film formation includes: preparing a substrate; forming a thin film above the substrate; and crystallizing the thin film by irradiating the thin film with a light beam, in which the crystallizing includes steps of: crystallizing the thin film in a first region into a first crystalline thin film by irradiating the first region while scanning a first light beam relative to the substrate, the first region including at least one of: edge portions of the substrate; and a region through which a cutting line passes when the substrate is cut; and subsequently crystallizing the thin film in a second region into a second crystalline thin film by irradiating at least the second region while scanning a second light beam relative to the substrate, and the thin film has a higher absorption ratio of the second light beam than that of the first crystalline thin film.

Abstract translation: 薄膜形成方法包括：制备基底; 在衬底上形成薄膜; 以及通过用光束照射所述薄膜来使所述薄膜结晶，其中所述结晶包括以下步骤：通过在扫描第一光束时照射第一区域而将第一区域中的薄膜结晶成第一晶体薄膜 所述基板，所述第一区域包括所述基板的边缘部分中的至少一个; 以及当切割基板时切割线通过的区域; 并且随后通过在扫描第二光束相对于衬底扫描至少第二区域的同时将第二区域中的薄膜结晶成第二晶体薄膜，并且该薄膜具有比第二光束更高的吸收比 的第一晶体薄膜。