Invention Grant
US09236312B2 Preventing EPI damage for cap nitride strip scheme in a Fin-shaped field effect transistor (FinFET) device
有权
防止在鳍状场效应晶体管(FinFET)器件中的氮化碳氮化层方案的EPI损坏
- Patent Title: Preventing EPI damage for cap nitride strip scheme in a Fin-shaped field effect transistor (FinFET) device
- Patent Title (中): 防止在鳍状场效应晶体管(FinFET)器件中的氮化碳氮化层方案的EPI损坏
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Application No.: US14053088Application Date: 2013-10-14
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Publication No.: US09236312B2Publication Date: 2016-01-12
- Inventor: Hong Yu , Hyucksoo Yang , Richard J. Carter
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L21/28 ; H01L27/092 ; H01L27/12 ; H01L21/84 ; H01L21/8238 ; H01L29/66 ; H01L21/762 ; H01L27/088

Abstract:
Approaches for forming an oxide cap to protect a semiconductor device (e.g., a fin field effect transistor device (FinFET)) are provided. Specifically, approaches are provided for forming an oxide cap over a subset (e.g., SiP regions) of raised source drain (RSD) structures on the set of fins of the FinFET device to mitigate damage during subsequent processing. The oxide spacer is deposited before the removal of a nitride capping layer from the FinFET device (e.g., by a hot phosphorus wash). The oxide cap on top of the RSD structures will be preserved throughout the removal of the nitride capping layer to provide hardmask protection during this process.
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