Invention Grant
- Patent Title: Integrated circuit having improved radiation immunity
- Patent Title (中): 具有改善的辐射抗扰性的集成电路
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Application No.: US13686553Application Date: 2012-11-27
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Publication No.: US09236353B2Publication Date: 2016-01-12
- Inventor: Praful Jain , James Karp , Michael J. Hart
- Applicant: Xilinx, Inc.
- Applicant Address: US CA San Jose
- Assignee: XILINX, INC.
- Current Assignee: XILINX, INC.
- Current Assignee Address: US CA San Jose
- Agent John J. King
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L23/552 ; H01L21/02 ; G11C11/412 ; H01L27/02 ; H01L27/11
Abstract:
An integrated circuit having improved radiation immunity is described. The integrated circuit comprises a substrate; a P-well formed on the substrate and having N-type transistors of a memory cell; and an N-well formed on the substrate and having P-type transistors of the memory cell; wherein the N-well has minimal dimensions for accommodating the P-type transistors.
Public/Granted literature
- US20140145293A1 INTEGRATED CIRCUIT HAVING IMPROVED RADIATION IMMUNITY Public/Granted day:2014-05-29
Information query
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