Invention Grant
- Patent Title: Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element
- Patent Title (中): 半导体元件，半导体元件的制造方法以及包含半导体元件的半导体器件
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Application No.: US14509310Application Date: 2014-10-08
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Publication No.: US09236428B2Publication Date: 2016-01-12
- Inventor: Atsuo Isobe , Hiromichi Godo
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2011-282453 20111223
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/04 ; H01L31/036 ; H01L31/0376 ; H01L31/20 ; H01L29/06 ; H01L29/786 ; H01L29/66 ; H01L29/78 ; H01L27/108 ; H01L27/11
Abstract:
A structure including an oxide semiconductor layer which is provided over an insulating surface and includes a channel formation region and a pair of low-resistance regions between which the channel formation region is positioned, a gate insulating film covering a top surface and a side surface of the oxide semiconductor layer, a gate electrode covering a top surface and a side surface of the channel formation region with the gate insulating film positioned therebetween, and electrodes electrically connected to the low-resistance regions is employed. The electrodes are electrically connected to at least side surfaces of the low-resistance regions, so that contact resistance with the source electrode and the drain electrode is reduced.
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