Invention Grant
US09236483B2 FinFET with backgate, without punchthrough, and with reduced fin height variation
有权
FinFET带背盖，无穿孔，并具有降低的翅片高度变化
- Patent Title: FinFET with backgate, without punchthrough, and with reduced fin height variation
- Patent Title (中): FinFET带背盖，无穿孔，并具有降低的翅片高度变化
-
Application No.: US14179311Application Date: 2014-02-12
-
Publication No.: US09236483B2Publication Date: 2016-01-12
- Inventor: Bin Yang , Xia Li , Pr Chidambaram , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L29/78 ; H01L29/267 ; H01L29/06 ; H01L29/66 ; H03K17/687
Abstract:
A FinFET having a backgate and a barrier layer beneath the fin channel of the FinFET, where the barrier layer has a bandgap greater than that of the backgate. The barrier layer serves as an etch stop layer under the fin channel, resulting in reduced fin channel height variation. The backgate provides improved current control. There is less punchthrough due to the higher bandgap barrier layer. The FinFET may also include deeply embedded stressors adjacent to the source/drain diffusions through the high bandgap barrier layer.
Public/Granted literature
- US20150228795A1 FINFET WITH BACKGATE, WITHOUT PUNCHTHROUGH, AND WITH REDUCED FIN HEIGHT VARIATION Public/Granted day:2015-08-13
Information query
IPC分类:
