Invention Grant
- Patent Title: Technique to reduce the third harmonic of an on-state RF switch
- Patent Title (中): 降低导通状态RF开关三次谐波的技术
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Application No.: US14271921Application Date: 2014-05-07
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Publication No.: US09236957B2Publication Date: 2016-01-12
- Inventor: Eric K. Bolton , Daniel Charles Kerr , Marcus Granger-Jones
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H04B1/44
- IPC: H04B1/44 ; H04B15/02

Abstract:
RF switching circuitry includes an RF switch coupled between an input node and an output node. Distortion compensation circuitry is coupled in parallel with the RF switch between the input node and the output node. The RF switch is configured to selectively pass an RF signal from the input node to the output node based on a first switching control signal. The distortion compensation circuitry is configured to boost a portion of the RF signal that is being compressed by the RF switch when the amplitude of the RF signal is above a predetermined threshold by selectively injecting current into one of the input node or the output node. Boosting a portion of the RF signal that is being compressed by the RF switch allows a signal passing through the RF switch to remain substantially linear, thereby improving the performance of the RF switching circuitry.
Public/Granted literature
- US20140335801A1 TECHNIQUE TO REDUCE THE THIRD HARMONIC OF AN ON-STATE RF SWITCH Public/Granted day:2014-11-13
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