发明授权
- 专利标题： Plasma etch for chromium alloys
- 专利标题（中）： 铬合金等离子体蚀刻
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申请号： US12577335申请日： 2009-10-12
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公开(公告)号： US09238870B2公开(公告)日： 2016-01-19
- 发明人: Abbas Ali
- 申请人： Abbas Ali
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Frank D. Cimino
- 主分类号： C23F4/00
- IPC分类号： C23F4/00 ; G03F1/80 ; H01L21/3213 ; H01L49/02
摘要：
A reactive ion etching (RIE) process comprising a chlorine source gas and an oxygen source gas with an atomic ratio of chlorine to oxygen in the plasma of at least 6 to 1 is used to etch chromium alloy films such as SiCr, SiCrC, SiCrO, SiCrCO, SiCrCN, SiCrON, SiCrCON, CrO, CrN, CrON, and NiCr for example. Additionally, a fluorine source may be added to the etch chemistry.
公开/授权文献
- US20110086488A1 PLASMA ETCH FOR CHROMIUM ALLOYS 公开/授权日：2011-04-14
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