Invention Grant
US09240450B2 IGBT with emitter electrode electrically connected with impurity zone
有权
IGBT，发射极电极与杂质区电连接
- Patent Title: IGBT with emitter electrode electrically connected with impurity zone
- Patent Title (中): IGBT，发射极电极与杂质区电连接
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Application No.: US14178419Application Date: 2014-02-12
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Publication No.: US09240450B2Publication Date: 2016-01-19
- Inventor: Dorothea Werber , Volodymyr Komarnitskyy , Thomas Gutt
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L23/62 ; H01L29/08 ; H01L29/06 ; H01L29/10 ; H01L29/40 ; H01L29/47 ; H01L29/739
Abstract:
A semiconductor device includes a semiconductor body including a drift zone of a first conductivity type, an emitter region of a second, complementary conductivity type configured to inject charge carriers into the drift zone, and an emitter electrode. The emitter electrode includes a metal silicide layer in direct ohmic contact with the emitter region. A net impurity concentration in a portion of the emitter region directly adjoining the metal silicide layer is at most 1×1017 cm−3.
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