Invention Grant
- Patent Title: Fin-type field effect transistors including aluminum doped metal-containing layer
- Patent Title (中): 鳍型场效应晶体管,包括掺杂铝的金属层
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Application No.: US13684655Application Date: 2012-11-26
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Publication No.: US09240483B2Publication Date: 2016-01-19
- Inventor: June-hee Lee , Jae-yeol Song , Hye-Ian Lee , Hong-bae Park , Sang-jin Hyun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0041598 20120420
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/78 ; H01L27/088

Abstract:
A semiconductor device includes a fin-type active region; a gate dielectric layer covering an upper surface and opposite lateral surfaces of the fin-type active region; and a gate line extending on the gate dielectric layer to cover the upper surface and opposite lateral surfaces of the fin-type active region and to cross the fin-type active region. The gate line includes an aluminum (Al) doped metal-containing layer extending to cover the upper surface and opposite lateral surfaces of the fin-type active region to a uniform thickness, and a gap-fill metal layer extending on the Al doped metal-containing layer over the fin-type active region. Related fabrication methods are also described.
Public/Granted literature
- US20130277748A1 FIN-TYPE FIELD EFFECT TRANSISTORS INCLUDING ALUMINUM DOPED METAL-CONTAINING LAYER Public/Granted day:2013-10-24
Information query
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