Invention Grant
- Patent Title: Magnetoresistive devices and methods for manufacturing magnetoresistive devices
- Patent Title (中): 磁阻器件及制造磁阻器件的方法
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Application No.: US13850345Application Date: 2013-03-26
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Publication No.: US09240546B2Publication Date: 2016-01-19
- Inventor: Juergen Zimmer , Wolfgang Raberg , Stephan Schmitt
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/12 ; H01L43/08
Abstract:
A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer are separated by a portion of the electrically insulating layer.
Public/Granted literature
- US20140291788A1 Magnetoresistive Devices and Methods for Manufacturing Magnetoresistive Devices Public/Granted day:2014-10-02
Information query
IPC分类:
