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公开(公告)号：US10677675B2
公开(公告)日：2020-06-09
申请号：US16114543
申请日：2018-08-28
Applicant: Infineon Technologies AG
Inventor： Mathias Vaupel , Matthias Boehm , Steven Gross , Markus Loehndorf , Stephan Schmitt , Horst Theuss , Helmut Wietschorke
Abstract: A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (IDP) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the IPD chip and the discrete passive devices are arranged within the housing.
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公开(公告)号：US10060819B2
公开(公告)日：2018-08-28
申请号：US14945661
申请日：2015-11-19
Applicant: Infineon Technologies AG
Inventor： Mathias Vaupel , Matthias Boehm , Steven Gross , Markus Loehndorf , Stephan Schmitt , Horst Theuss , Helmut Wietschorke
CPC classification number: G01L19/0084 , G01L19/147 , G01L19/148
Abstract: A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (IDP) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the IPD chip and the discrete passive devices are arranged within the housing.
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3.发明申请公开(公告)号：US20140291788A1
公开(公告)日：2014-10-02
申请号：US13850345
申请日：2013-03-26
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Juergen Zimmer , Wolfgang Raberg , Stephan Schmitt
Abstract: A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer are separated by a portion of the electrically insulating layer.
Abstract translation: 磁阻器件包括衬底和布置在衬底上的电绝缘层。 磁阻器件还包括嵌入在电绝缘层中的第一自由层和嵌入电绝缘层中的第二自由层。 第一自由层和第二自由层被电绝缘层的一部分分开。
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公开(公告)号：US20200370983A1
公开(公告)日：2020-11-26
申请号：US16896628
申请日：2020-06-09
Applicant: Infineon Technologies AG
Inventor： Mathias Vaupel , Matthias Boehm , Steven Gross , Markus Loehndorf , Stephan Schmitt , Horst Theuss , Helmut Wietschorke
Abstract: A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (IDP) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the IPD chip and the discrete passive devices are arranged within the housing.
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公开(公告)号：US20180364123A1
公开(公告)日：2018-12-20
申请号：US16114543
申请日：2018-08-28
Applicant: Infineon Technologies AG
Inventor： Mathias Vaupel , Matthias Boehm , Steven Gross , Markus Loehndorf , Stephan Schmitt , Horst Theuss , Helmut Wietschorke
Abstract: A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (IDP) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the IPD chip and the discrete passive devices are arranged within the housing.
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Patent Agency Ranking
6.发明申请MAGNETORESISTIVE DEVICES AND METHODS FOR MANUFACTURING MAGNETORESISTIVE DEVICES 审中-公开磁电装置及制造磁性装置的方法公开(公告)号：US20160099405A1
公开(公告)日：2016-04-07
申请号：US14966205
申请日：2015-12-11
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Wolfgang Raberg , Stephan Schmitt
Abstract: A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer are separated by a portion of the electrically insulating layer.
Abstract translation: 磁阻器件包括衬底和布置在衬底上的电绝缘层。 磁阻器件还包括嵌入在电绝缘层中的第一自由层和嵌入电绝缘层中的第二自由层。 第一自由层和第二自由层被电绝缘层的一部分分开。
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公开(公告)号：US11287344B2
公开(公告)日：2022-03-29
申请号：US16896628
申请日：2020-06-09
Applicant: Infineon Technologies AG
Inventor： Mathias Vaupel , Matthias Boehm , Steven Gross , Markus Loehndorf , Stephan Schmitt , Horst Theuss , Helmut Wietschorke
Abstract: A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (IDP) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the IPD chip and the discrete passive devices are arranged within the housing.
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公开(公告)号：US09691970B2
公开(公告)日：2017-06-27
申请号：US14966205
申请日：2015-12-11
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Wolfgang Raberg , Stephan Schmitt
Abstract: A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer are separated by a portion of the electrically insulating layer.
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9.发明申请PRESSURE SENSOR MODULE HAVING A SENSOR CHIP AND PASSIVE DEVICES WITHIN A HOUSING 审中-公开带传感器芯片的压力传感器模块和外壳中的被动设备公开(公告)号：US20160169763A1
公开(公告)日：2016-06-16
申请号：US14945661
申请日：2015-11-19
Applicant: Infineon Technologies AG
Inventor： Mathias Vaupel , Matthias Boehm , Steven Gross , Markus Loehndorf , Stephan Schmitt , Horst Theuss , Helmut Wietschorke
CPC classification number: G01L19/0084 , G01L19/147 , G01L19/148
Abstract: A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (IDP) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the IPD chip and the discrete passive devices are arranged within the housing.
Abstract translation: 公开了一种包括壳体，压力传感器芯片以及集成无源器件（IDP）芯片和分立无源器件中的一个或多个的压力传感器模块。 压力传感器芯片和一个或多个IPD芯片和分立无源器件布置在壳体内。
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10.发明授权公开(公告)号：US09240546B2
公开(公告)日：2016-01-19
申请号：US13850345
申请日：2013-03-26
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Wolfgang Raberg , Stephan Schmitt
Abstract: A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer are separated by a portion of the electrically insulating layer.
Abstract translation: 磁阻器件包括衬底和布置在衬底上的电绝缘层。 磁阻器件还包括嵌入在电绝缘层中的第一自由层和嵌入电绝缘层中的第二自由层。 第一自由层和第二自由层被电绝缘层的一部分分开。
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