Invention Grant
- Patent Title: Reference voltage generators and sensing circuits
- Patent Title (中): 参考电压发生器和感测电路
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Application No.: US14287946Application Date: 2014-05-27
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Publication No.: US09245597B2Publication Date: 2016-01-26
- Inventor: Xinwei Guo , Mingdong Cui
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C7/06 ; G11C7/14 ; G11C13/00 ; G05F3/16 ; G11C8/08

Abstract:
Described examples include sensing circuits and reference voltage generators for providing a reference voltage to a sensing circuit. The sensing circuits may sense a state of a memory cell, which may be a PCM memory cell. The sensing circuits may include a cascode transistor. Examples of reference voltage generators may include a global reference voltage generator coupled to multiple bank reference voltage generators which may reduce an output resistance of the voltage generator routing.
Public/Granted literature
- US20140254258A1 REFERENCE VOLTAGE GENERATORS AND SENSING CIRCUITS Public/Granted day:2014-09-11
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