发明授权
- 专利标题： Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device
- 专利标题（中）： 用于自旋传输转矩开关装置的耐热垂直磁各向异性耦合元件
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申请号： US13571406申请日： 2012-08-10
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公开(公告)号： US09245608B2公开(公告)日： 2016-01-26
- 发明人: Wei-Chuan Chen , Kangho Lee , Xiaochun Zhu , Seung H. Kang
- 申请人： Wei-Chuan Chen , Kangho Lee , Xiaochun Zhu , Seung H. Kang
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Donald D. Min; Paul Holdaway
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; G11C11/16 ; G11C11/15
摘要：
Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.
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