Invention Grant
- Patent Title: Non-bridging contact via structures in proximity
- Patent Title (中): 非桥接接触通过接近的结构
-
Application No.: US13443963Application Date: 2012-04-11
-
Publication No.: US09245788B2Publication Date: 2016-01-26
- Inventor: Chiahsun Tseng , Jin Liu , Lei Zhuang
- Applicant: Chiahsun Tseng , Jin Liu , Lei Zhuang
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48 ; H01L21/74 ; H01L21/033 ; H01L21/308 ; H01L21/311
Abstract:
A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.
Public/Granted literature
- US20130270709A1 NON-BRIDGING CONTACT VIA STRUCTURES IN PROXIMITY Public/Granted day:2013-10-17
Information query
IPC分类:
