Invention Grant
- Patent Title: Method for fabricating a contact
- Patent Title (中): 制造触点的方法
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Application No.: US14754190Application Date: 2015-06-29
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Publication No.: US09245791B2Publication Date: 2016-01-26
- Inventor: Qinghuang Lin , Ying Zhang
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Main IPC: H01L21/283
- IPC: H01L21/283 ; H01L21/4763 ; H01L21/768 ; H01L21/027
Abstract:
A contact structure includes a permanent antireflection coating formed on a substrate having contact pads. A patterned dielectric layer is formed on the antireflective coating. The patterned dielectric layer and the permanent antireflective coating form openings. The openings correspond with locations of the contact pads. Contact structures are formed in the openings to make electrical contact with the contacts pads such that the patterned dielectric layer and the permanent antireflective coating each have a conductively filled region forming the contact structures.
Public/Granted literature
- US20150318208A1 MIDDLE OF LINE STRUCTURES AND METHODS FOR FABRICATION Public/Granted day:2015-11-05
Information query
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